Features These N-Channel enhancement mode power field effect • 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary
Tags: Transistor
Features These N-Channel enhancement mode power field effect • 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary
Tags: Transistor